The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2004
Filed:
May. 22, 2002
Applicant:
Inventors:
Martin L. Green, Summit, NJ (US);
Glen D. Wilk, New Providence, NJ (US);
Assignee:
Agere Systems Inc., Allentown, PA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/18242 ;
Abstract
A method of forming an annealed high-K metal oxide transistor gate structure is disclosed. A metal oxide layer is formed over a semiconductor substrate. The metal oxide layer undergoes a buffered annealed process in an oxygen atmosphere to anneal the metal oxide layer at or below the thermodynamic chemical equilibrium of SiO/SiO and at or above the thermodynamic chemical equilibrium of the metal oxide layer.