The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2007
Filed:
Jun. 24, 2004
Martin Michael Frank, Summit, NJ (US);
Yves Chabal, Holmdel, NJ (US);
Glen David Wilk, New Providence, NJ (US);
Martin L. Green, Summit, NJ (US);
Martin Michael Frank, Summit, NJ (US);
Yves Chabal, Holmdel, NJ (US);
Glen David Wilk, New Providence, NJ (US);
Martin L. Green, Summit, NJ (US);
Agere Systems, Inc., Allentown, PA (US);
Abstract
The present invention provides a method for manufacturing a semiconductor device comprising an insulating layer that includes a seed layer formed on a silicon substrate. The seed layer is formed by exposing a hydrogen-terminated surface of the silicon substrate in a substantially oxygen-free environment to a seed layer precursor comprising a methylated metal. Forming the insulating layer further includes depositing a dielectric material on the seed layer.