Texas Instruments Corporation

Agere Systems Inc.

Lucent Technologies Inc.

Glen D Wilk

Robert M Wallace

John Mark Anthony

Yi Wei

Richard A Stoltz

Scott Robert Summerfelt

Martin Laurence Green

Yves Chabal

Theodore Sidney Moise

Sunil V Hattangady

Martin Michael Frank

Berinder P S Brar

Henry Litzmann Edwards

Conor S Rafferty

Dim-Lee Kwong

Michael Louis Steigerwald

Paul C McIntyre

Gregory L Timp

David Anthony Muller

Christopher D W Jones

Jan Paul Van Der Wagt

Peide Ye

Mark Anthony

A semiconductor device having composite dielectric layer formed between a silicon substrate and a gate electrode. The composite gate dielectric layer including a layer of silicon oxide, SiO, having a dielectric constant of greater than about 3.9 and about 12 or less, and a complementary dielectric layer for inhibiting the flow of leakage current through the composite dielectric layer.

Method of fabricating a composite gate dielectric layer

The present invention provides a method for manufacturing a semiconductor device comprising an insulating layer that includes a seed layer formed on a silicon substrate. The seed layer is formed by exposing a hydrogen-terminated surface of the silicon substrate in a substantially oxygen-free environment to a seed layer precursor comprising a methylated metal. Forming the insulating layer further includes depositing a dielectric material on the seed layer.

Process for fabricating a semiconductor device having an insulating layer formed over a semiconductor substrate

A field effect semiconductor device comprising a high permittivity silicate gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substratehaving a semiconducting channel regionformed therein. A metal silicate gate dielectric layeris formed over this substrate, followed by a conductive gate. Silicate layermay be, e.g., hafnium silicate, such that the dielectric constant of the gate dielectric is significantly higher than the dielectric constant of silicon dioxide. However, the silicate gate dielectric may also be designed to have the advantages of silicon dioxide, e.g. high breakdown, low interface state density, and high stability. The present invention includes methods for depositing both amorphous and polycrystalline silicate layers, as well as graded composition silicate layers.

High permittivity silicate gate dielectric

This invention pertains generally to forming thin oxides at low temperatures, and more particularly to forming uniformly thick, thin oxides. We disclose a low temperature method for forming a thin, uniform oxideon a silicon surface. This method includes providing a partially completed integrated circuit on a semiconductor substratewith a clean, hydrogen terminated or atomically flat, silicon surface; and stabilizing the substrate at a first temperature. The method further includes exposing the silicon surface to an atmosphereincluding ozone, while maintaining the substrateat the first temperature. In this method, the exposing step creates a uniformly thick, oxide film. This method is suitable for room temperature processing.

Low temperature method for forming a thin, uniform oxide

An embodiment of the instant invention is a method of forming a electrically conductive structure insulatively disposed from a second structure, the method comprising: providing the second structure; forming the electrically conductive structure of a material (stepof FIG.) that remains substantially conductive after it is oxidized; forming an electrically insulative layer (stepof FIG.) between the second structure and the conductive structure; and oxidizing the conductive structure by subjecting it to an ozone containing atmosphere for a duration of time and at a first temperature.

Method of forming metal oxide gate structures and capacitor electrodes

The present invention provides a method for manufacturing a semiconductor device comprising an insulating layer that includes a seed layer formed on a substrate. The seed layer is formed by removing hydrogen forming the substrate, depositing a seed layer precursor and exposing the precursor to excited atoms to form a seed layer on the substrate.

Semiconductor device using an insulating layer having a seed layer

A method of fabricating an electronic device over a semiconductor substrate, the method comprising the steps of: forming a conductive structure over the semiconductor substrate (step of FIG. ); and forming a layer of high-dielectric constant material between the conductive structure and the semiconductor substrate (step of FIG. ), the layer of high-dielectric constant material is formed by supplying a gaseous silicon source and a second gaseous material which is comprised of a material selected from the group consisting of: Hf, Zr, La, Y, Sc, Ce and any combination thereof.

Chemical vapor deposition of silicate high dielectric constant materials

A method of forming an annealed high-K metal oxide transistor gate structure is disclosed. A metal oxide layer is formed over a semiconductor substrate. The metal oxide layer undergoes a buffered annealed process in an oxygen atmosphere to anneal the metal oxide layer at or below the thermodynamic chemical equilibrium of SiO/SiO and at or above the thermodynamic chemical equilibrium of the metal oxide layer.

Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process

The present invention provides a method for manufacturing a semiconductor device comprising a III-V semiconductor substrate, and an insulating layer deposited on the substrate by Atomic Layer Deposition (ALD). The use of ALD to deposit the insulating layer was found to facilitate the creation of active devices that avoid Fermi layer pinning. In addition, such insulating layer may be advantageously used as a passivation layer in III-V substrate based active devices and transistors.

Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrate

An embodiment of the instant invention is a method of forming a semiconductor device situated over a semiconductor substrate, the method comprising the steps of: forming a layer of suboxide material (layer of FIG. ) over the substrate (substrate of FIGS. ), the suboxide material comprised of a material selected from the group consisting of: HfSiO , ZrSiO , LaSiO , YSiO , ScSiO , and CeSiO ; and forming a structure (layer of FIG. ) on the layer of suboxide material. In an alternative embodiment, semiconductor device is a transistor where and the structure formed on the layer of suboxide material is a gate electrode (preferably comprised of: polycrystalline silicon, tungsten, titanium, tungsten nitride, titanium nitride, platinum, aluminum, and any combination thereof. In another alternative embodiment, the semiconductor device is a storage device where a bottom electrode is formed under and abutting the suboxide material which forms the dielectric to the storage device and the structure formed on the layer of suboxide material is the top electrode of the storage device.

Method to form silicates as high dielectric constant materials

A method for forming a thermal silicon nitride on a semiconductor substrate is disclosed. This method allows formation of thermal silicon nitride that is thick enough for a FET gate dielectric, but has a low thermal budget.

Lower temperature method for forming high quality silicon-nitrogen dielectrics

The present invention provides a method of manufacturing a semiconductor device comprising, providing a semiconductor substrate, forming a substantially-hydroxylated SiO H layer on the semiconductor substrate in a presence of oxygen and hydrogen, and forming a metallic oxide, high-K dielectric layer on the substantially-hydroxylated SiO H layer. The substantially-hydroxylated SiO H layer has a surface concentration of hydroxyl (OH) species equal to or greater than about 3&times;10 hydroxyl per cm .

Semiconductor device having a high-K gate dielectric and method of manufacture thereof

A lithium niobate-based electro-optic device is formed to include a parylene conformal coating layer, as a sealant against moisture. The use of parylene (preferably, parylene-C) has been found to form an acceptable moisture vapor barrier without the need for additional hermetic packaging of the electro-optic device.

Growing community of inventors

Dallas, TX, United States of America

Glen D Wilk