The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2006
Filed:
Dec. 17, 2004
John Mark Anthony, McKinney, TX (US);
Scott R. Summerfelt, Garland, TX (US);
Robert M. Wallace, Richardson, TX (US);
Glen D. Wilk, Dallas, TX (US);
John Mark Anthony, McKinney, TX (US);
Scott R. Summerfelt, Garland, TX (US);
Robert M. Wallace, Richardson, TX (US);
Glen D. Wilk, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A field effect semiconductor device comprising a high permittivity silicate gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substratehaving a semiconducting channel regionformed therein. A metal silicate gate dielectric layeris formed over this substrate, followed by a conductive gate. Silicate layermay be, e.g., hafnium silicate, such that the dielectric constant of the gate dielectric is significantly higher than the dielectric constant of silicon dioxide. However, the silicate gate dielectric may also be designed to have the advantages of silicon dioxide, e.g. high breakdown, low interface state density, and high stability. The present invention includes methods for depositing both amorphous and polycrystalline silicate layers, as well as graded composition silicate layers.