The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Oct. 21, 1998
Glen D. Wilk, Dallas, TX (US);
Robert M. Wallace, Richardson, TX (US);
Berinder P. S. Brar, Plano, TX (US);
Glen D. Wilk, Dallas, TX (US);
Robert M. Wallace, Richardson, TX (US);
Berinder P. S. Brar, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
This invention pertains generally to forming thin oxides at low temperatures, and more particularly to forming uniformly thick, thin oxides. We disclose a low temperature method for forming a thin, uniform oxideon a silicon surface. This method includes providing a partially completed integrated circuit on a semiconductor substratewith a clean, hydrogen terminated or atomically flat, silicon surface; and stabilizing the substrate at a first temperature. The method further includes exposing the silicon surface to an atmosphereincluding ozone, while maintaining the substrateat the first temperature. In this method, the exposing step creates a uniformly thick, oxide film. This method is suitable for room temperature processing.