The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2004
Filed:
Apr. 08, 2003
Applicant:
Inventor:
Glen D. Wilk, Dallas, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18236 ; H01L 2/1336 ; H01L 2/13205 ; H01L 2/14763 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/18236 ; H01L 2/1336 ; H01L 2/13205 ; H01L 2/14763 ; H01L 2/1469 ;
Abstract
A method of fabricating an electronic device over a semiconductor substrate, the method comprising the steps of: forming a conductive structure over the semiconductor substrate (step of FIG. ); and forming a layer of high-dielectric constant material between the conductive structure and the semiconductor substrate (step of FIG. ), the layer of high-dielectric constant material is formed by supplying a gaseous silicon source and a second gaseous material which is comprised of a material selected from the group consisting of: Hf, Zr, La, Y, Sc, Ce and any combination thereof.