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For the Inventor, By the Inventor

Leuven, Belgium

Gaspard Hiblot

USPTO Granted Patents = 16 

 

Average Co-Inventor Count = 2.4

ph-index = 2

Forward Citations = 20(Granted Patents)


Location History:

  • Heverlee, BE (2020 - 2021)
  • Leuven, BE (2021 - 2023)

Company Filing History:

goldMedal16 out of 967 
 
Imec Vzw
 patents

Years Active: 2020-2025

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16 patents (USPTO):Explore Patents
1. 12494424 - Interconnect structure of a semiconductor component and methods for producing the structure (2025-12-09),
2. 12464805 - Method for forming an interconnection structure (2025-11-04),
3. 12154830 - Method of producing a gate cut in a semiconductor component (2024-11-26),
4. 11765910 - Bipolar selector device for a memory array (2023-09-19),
5. 11757039 - Method for inducing stress in semiconductor devices (2023-09-12),
6. 11621295 - Bipolar selector device for a memory array (2023-04-04),
7. 11257764 - Integrated circuit with backside power delivery network and backside transistor (2022-02-22),
8. 11121086 - Vertical isolated gate field effect transistor integrated in a semiconductor chip (2021-09-14),
9. 11114337 - Method for bonding and interconnecting semiconductor chips (2021-09-07),
10. 11038067 - Stress sensor suitable for measuring mechanical stress in a layered metallization structure of a microelectronic component (2021-06-15),
11. 10998413 - Semiconductor fin structures having silicided portions (2021-05-04),
12. 10903335 - Self-aligned internal spacer with EUV (2021-01-26),
13. 10825806 - Semiconductor integrated circuit manufactured using a plasma-processing step (2020-11-03),
14. 10811315 - Method for producing a through semiconductor via connection (2020-10-20),
15. 10712760 - Low-temperature voltage reference using coulomb blockade mechanism (2020-07-14),

Title: Gaspard Hiblot: Innovator in Semiconductor Technology

Introduction

Gaspard Hiblot is a prominent inventor based in Leuven, Belgium. He has made significant contributions to the field of semiconductor technology, holding a total of 16 patents. His innovative methods have advanced the design and functionality of semiconductor components.

Latest Patents

Hiblot's latest patents include a "Method for forming an interconnection structure" and a "Method of producing a gate cut in a semiconductor component." The first patent describes a method for creating an interconnection structure for two transistors, which involves stacking channel portions above each other on a substrate. This method enhances the electrical connectivity between the transistors, improving overall device performance. The second patent outlines a technique for producing a gate cut in a semiconductor component, utilizing an array of nano-sized semiconductor fins and buried power rails to optimize power delivery in integrated circuits.

Career Highlights

Gaspard Hiblot is currently employed at Imec Vzw, a leading research and innovation hub in nanoelectronics and digital technologies. His work at Imec has positioned him as a key player in the semiconductor industry, where he continues to push the boundaries of technology through his inventive approaches.

Collaborations

Hiblot collaborates with esteemed colleagues such as Geert Van Der Plas and Stefaan Van Huylenbroeck. Their combined expertise fosters a dynamic environment for innovation and development in semiconductor research.

Conclusion

Gaspard Hiblot's contributions to semiconductor technology through his patents and collaborative efforts highlight his role as a significant inventor in the field. His work continues to influence advancements in electronic devices and systems.

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