The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2022

Filed:

May. 14, 2020
Applicant:

Imec Vzw, Leuven, BE;

Inventors:

Gaspard Hiblot, Leuven, BE;

Geert Van Der Plas, Leuven, BE;

Assignee:

IMEC vzw, Leuven, BE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 23/50 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5384 (2013.01); H01L 21/76802 (2013.01); H01L 21/823418 (2013.01); H01L 23/50 (2013.01); H01L 29/66477 (2013.01); H01L 29/78 (2013.01);
Abstract

An integrated circuit (IC) chip that includes a semiconductor substrate including active devices on its front side, and at least part of a power delivery network (PDN) on its back side, is disclosed. In one aspect, the PDN includes a power supply terminal (Vdd) and a reference terminal (Vss) at the back of the IC. A plurality of TSV (Through Semiconductor Via) connections through the substrate bring the power to the front of the substrate. A field effect transistor is integrated at the back side of the substrate, and includes a source electrode, a drain electrode, and a gate electrode, which are contacted at the back side of the substrate. The IC further includes a gate control terminal for controlling the gate voltage. The transistor is coupled between the power supply terminal and one or more of the active devices of the IC.


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