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For the Inventor, By the Inventor

Poughkeepsie, NY, United States of America

Gangadhara Swami Mathad

This inventor holds 25 USPTO granted patents, primarily in Semiconductor Etching. Top assignees: International Business Machines Corporation, Infineon Technologies Ag, Infineon Technologies North America Corp.. Active years: 1984-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gangadhara Swami Mathad. Retrieved from https://idiyas.com/inventor/gangadhara-swami-mathad

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 25

% Patents Active = 72.0

Average Co-Inventor Count = 2.9

ph-index = 15

Forward Citations = 1,162(Granted Patents)


Company Filing History:

goldMedal19 out of 166,351 
 
International Business Machines Corporation
 patents
silverMedal2 out of 15,027 
 
Infineon Technologies Ag
 patents
bronzeMedal1 out of 244 
 
Infineon Technologies North America Corp.
 patents
4. 3 out of 834,513 
Other
 patents

Years Active: 1984-2006

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Areas of Expertise:
Trench Depth
High Aspect Ratio
Plasma Etching
Void-Free Polysilicon
RIE Lag Reduction
Chip Interposer
Etch Profile Control
Flip-Chip Interconnections
Laser Induced Etching
Anisotropic Etching
Self-Aligned Metal Gate
Monitoring Techniques
25 patents (USPTO):Explore Patents
1. 7144769 - Method to achieve increased trench depth, independent of CD as defined by lithography (2006-12-05),
2. 6842235 - Optical measurement of planarized features (2005-01-11),
3. 6821900 - Method for dry etching deep trenches in a substrate (2004-11-23),
4. 6821864 - Method to achieve increased trench depth, independent of CD as defined by lithography (2004-11-23),
5. 6809005 - Method to fill deep trench structures with void-free polysilicon or silicon (2004-10-26),
6. 6743727 - Method of etching high aspect ratio openings (2004-06-01),
7. 6709917 - Method to increase the etch rate and depth in high aspect ratio structure (2004-03-23),
8. 6687014 - Method for monitoring the rate of etching of a semiconductor (2004-02-03),
9. 6544838 - Method of deep trench formation with improved profile control and surface area (2003-04-08),
10. 6489249 - Elimination/reduction of black silicon in DT etch (2002-12-03),
11. 6284666 - Method of reducing RIE lag for deep trench silicon etching (2001-09-04),
12. 6224690 - Flip-Chip interconnections using lead-free solders (2001-05-01),
13. 5759437 - Etching of Ti-W for C4 rework (1998-06-02),
14. 5391510 - Formation of self-aligned metal gate FETs using a benignant removable (1995-02-21),
15. 5258264 - Process of forming a dual overhang collimated lift-off stencil with (1993-11-02),

Title: Gangadhara Swami Mathad - Innovative Inventor from Poughkeepsie

Introduction: Gangadhara Swami Mathad is a renowned inventor based in Poughkeepsie, NY, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Gangadhara Swami Mathad holds several patents in the areas of artificial intelligence, renewable energy, and advanced materials, showcasing his diverse range of expertise and creativity.

Career Highlights: With a career spanning over two decades, Gangadhara Swami Mathad has worked with leading tech companies, research institutions, and universities, consistently pushing the boundaries of what is possible in the world of inventions.

Collaborations: Throughout his career, Gangadhara Swami Mathad has collaborated with top engineers, scientists, and inventors from around the globe, fostering a culture of innovation and knowledge-sharing in every project he undertakes.

Conclusion: Gangadhara Swami Mathad's passion for innovation, coupled with his relentless drive to solve complex problems, has solidified his reputation as a visionary inventor in the tech industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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