The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2004

Filed:

Jan. 16, 2002
Applicant:
Inventors:

Shoaib Hasan Zaidi, Poughkeepsie, NY (US);

Gangadhara S. Mathad, Poughkeepsie, NY (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01B 9/02 ;
U.S. Cl.
CPC ...
G01B 9/02 ;
Abstract

A method of measuring the rate of etching of trenches on a substrate using interferometry is provided. The method comprises transmitting onto the substrate incident electromagnetic radiation having a wavelength above the wavelength at which the trenches act as waveguides for the radiation; collecting reflected electromagnetic radiation from the substrate; detecting a repetitive pattern of maximum intensities and minimum intensities of the reflected electromagnetic radiation during the etching; and determining the rate of etching based upon the wavelength of the incident electromagnetic radiation and the time period of the pattern.


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