The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 1995
Filed:
Apr. 07, 1994
Louis L Hsu, Fishkill, NY (US);
Gangadhara S Mathad, Poughkeepsie, NY (US);
Rajiv V Joshi, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A sub-micron FET is disclosed made by a method using expendable self-aligned gate structure up to and including the step of annealing the source/drain regions. The source/drain regions are formed by ion implantation using the expendable structure (diamond-like-carbon) as a mask. After the expendable structure has performed its further purpose of protecting the gate dielectric from contamination during the annealing cycle, the structure is easily removed by O.sub.2 plasma and replaced by a conventional metal gate material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile