The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2006
Filed:
Jul. 27, 2004
Kevin K. Chan, Staten Island, NY (US);
Subhash B. Kulkarni, Cortlandt Manor, NY (US);
Gangadhara S. Mathad, Poughkeepsie, NY (US);
Rajiv M. Ranade, Brewster, NY (US);
Kevin K. Chan, Staten Island, NY (US);
Subhash B. Kulkarni, Cortlandt Manor, NY (US);
Gangadhara S. Mathad, Poughkeepsie, NY (US);
Rajiv M. Ranade, Brewster, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming at least one deep trench structure having an increased trench depth is provided. The method includes providing at least one deep trench having sidewalls that extend to a common bottom wall in a surface of a substrate. Each deep trench has initial dimensions that are wider than targeted dimensions for the deep trenches. To reduce the initial dimensions to that of the targeted dimensions, an epitaxial silicon film is formed selectively or non-selectively on at least some portions of the sidewalls using a low-temperature ultra-high vacuum epitaxial silicon growth tehnique.