IDiyas

For the Inventor, By the Inventor

Hyogo, Japan

Fumitoshi Yamamoto

USPTO Granted Patents = 18

Average Co-Inventor Count = 1.9

ph-index = 5

Forward Citations = 75(Granted Patents)


Location History:

  • Itami, JP (1998)
  • Hyogo, JP (1998 - 2006)
  • Tokyo, JP (2003 - 2011)

Company Filing History:

goldMedal13 out of 21,351 
 
Mitsubishi Denki Kabushiki Kaisha
 patents
silverMedal3 out of 3,781 
 
Renesas Technology Corp.
 patents
bronzeMedal1 out of 7,524 
 
Renesas Electronics Corporation
 patents
4. 1 out of 832,680 
Other
 patents

Years Active: 1998-2011

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18 patents (USPTO):Explore Patents
1. 7880262 - Semiconductor device (2011-02-01),
2. 7339236 - Semiconductor device, driver circuit and manufacturing method of semiconductor device (2008-03-04),
3. 7026705 - Semiconductor device with surge protection circuit capable of preventing current leakage (2006-04-11),
4. 6693344 - Semiconductor device having low and high breakdown voltage transistors (2004-02-17),
5. 6639294 - Semiconductor device having a device formation region protected from a counterelectromotive force (2003-10-28),
6. 6593629 - Semiconductor device (2003-07-15),
7. 6573582 - Semiconductor device (2003-06-03),
8. 6518158 - Method of manufacturing a semiconductor device including a fuse (2003-02-11),
9. 6359318 - Semiconductor device with DMOS and bi-polar transistors (2002-03-19),
10. 6344678 - Semiconductor device comprising transistor (2002-02-05),
11. 6297532 - Semiconductor device and method of manufacturing the same (2001-10-02),
12. 6191466 - Semiconductor device containing a diode (2001-02-20),
13. 6153915 - CMOS semiconductor device (2000-11-28),
14. 6096619 - Method of manufacturing a semiconductor device comprising a capacitor (2000-08-01),
15. 5847440 - Bipolar transistor, semiconductor device having bipolar transistors (1998-12-08),
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