Location History:
- Itami, JP (1998)
- Hyogo, JP (1998 - 2006)
- Tokyo, JP (2003 - 2011)
Company Filing History:
13 out of 21,351 
3 out of 3,781 
1 out of 7,525 
Years Active: 1998-2011
Title: Fumitoshi Yamamoto: Innovator in Semiconductor Technology
Introduction
Fumitoshi Yamamoto is a prominent inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 18 patents. His work focuses on enhancing the efficiency and effectiveness of semiconductor devices.
Latest Patents
Yamamoto's latest patents include innovative designs for semiconductor devices. One notable invention features an active barrier structure that incorporates both p-type and n-type regions. This design allows for a floating potential and includes a trench isolation structure that effectively reduces chip size while preventing electron movement between regions. Another significant patent addresses the manufacturing method of semiconductor devices, which aims to suppress threshold voltage increases in transistors and improve withstand voltage between source and drain regions.
Career Highlights
Throughout his career, Fumitoshi Yamamoto has worked with leading companies in the semiconductor industry, including Mitsubishi Electric Corporation and Renesas Technology Corporation. His experience in these organizations has contributed to his expertise and innovative capabilities in semiconductor technology.
Collaborations
Yamamoto has collaborated with notable colleagues such as Tomohide Terashima and Yasunori Yamashita. These partnerships have fostered a collaborative environment that encourages innovation and the development of cutting-edge technologies.
Conclusion
Fumitoshi Yamamoto's contributions to semiconductor technology have established him as a key figure in the field. His innovative patents and collaborations reflect his commitment to advancing technology and improving semiconductor devices.