The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2003
Filed:
Jul. 10, 2002
Other;
Abstract
A semiconductor device includes an epitaxial layer formed on a P type silicon substrate; a P+ diffusion layer for dividing the epitaxial layer into an N− epi layer, which constitutes a device formation region, and an N− epi layer, which constitutes an invalid area; and an aluminum wire for electrically connecting the N− epi layer (invalid area) to the P+ diffusion layer. Since the potential of the N− epi layer (invalid area) can be made equal to that of the P+ diffusion layer, it is possible to prevent the electron supply from the P+ diffusion layer to the invalid area even when electrons are supplied to the device formation region by a counterelectromotive force produced by a load having an inductance L.