The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2002
Filed:
Mar. 06, 2000
Applicant:
Inventors:
Fumitoshi Yamamoto, Hyogo, JP;
Tomohide Terashima, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/7082 ;
U.S. Cl.
CPC ...
H01L 2/7082 ;
Abstract
An n epitaxial layer serving as a collector region is formed on a p-type silicon substrate. A p diffusion layer serving as a base region is formed on the n epitaxial layer. An n diffusion layer and an n diffusion layer defining an emitter region are formed on the p diffusion layer. A p diffusion layer serving as a base contact region for attaining contact with the p diffusion layer is formed with a prescribed interval between the same and the emitter region. Thus obtained is a semiconductor device comprising a transistor suppressing dispersion of a current amplification factor.