The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2000
Filed:
Jan. 07, 1998
Fumitoshi Yamamoto, Hyogo, JP;
Tetsuo Higuchi, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
On a p.sup.+ diffused region which is to be a lower electrode of a capacitor, a silicon nitride film which is a capacitor insulating layer is formed. An upper electrode is formed on this silicon nitride film. The upper electrode has a non-doped polycrystalline silicon film and a silicide layer. Non-doped polycrystalline silicon film is formed in contact with silicon nitride film. Silicide layer is formed on a surface of non-doped polycrystalline silicon film. Thus, a capacitor structure is obtained in which a larger capacitance and a higher breakdown voltage can be assured, so that it would not operate inaccurately even when it is integrated to a higher degree.