Company Filing History:
Years Active: 1992-2000
Title: Tetsuo Higuchi: Innovator in Semiconductor Technology
Introduction
Tetsuo Higuchi is a prominent inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on enhancing the performance and reliability of semiconductor devices.
Latest Patents
Higuchi's latest patents include a method of manufacturing a semiconductor device that comprises a capacitor. This innovative method involves forming a silicon nitride film as a capacitor insulating layer on a p.sup.+ diffused region, which serves as the lower electrode of the capacitor. An upper electrode is then created on this silicon nitride film, consisting of a non-doped polycrystalline silicon film and a silicide layer. The non-doped polycrystalline silicon film is in contact with the silicon nitride film, while the silicide layer is formed on the surface of the non-doped polycrystalline silicon film. This capacitor structure ensures a larger capacitance and a higher breakdown voltage, allowing for accurate operation even when integrated to a higher degree.
Career Highlights
Tetsuo Higuchi is associated with Mitsubishi Denki Kabushiki Kaisha, where he has been instrumental in advancing semiconductor technologies. His innovative approaches have led to improvements in device performance and reliability.
Collaborations
Higuchi has collaborated with notable colleagues, including Masaaki Ikegami and Fumitoshi Yamamoto. Their combined expertise has contributed to the successful development of various semiconductor technologies.
Conclusion
Tetsuo Higuchi's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced semiconductor devices.