The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 1994
Filed:
Oct. 14, 1992
Masaaki Ikegami, Hyogo, JP;
Tetsuo Higuchi, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A thin first insulating oxide film is formed on a semiconductor substrate. A thick second insulating oxide film is formed on a semiconductor substrate. A first polysilicon resistance film is formed on the first insulating oxide film. A second polysilicon resistance film is formed on the second insulating oxide film. An insulating protection film, which contains a large amount of hydrogen ion and covers the first polysilicon resistance film, second polysilicon resistance film, first electrode and second electrode, is formed on the semiconductor substrate. A hydrogen ion intercepting film, which prevents passage of hydrogen ion, is interposed between the first insulating oxide film and the first polysilicon resistance film and between the second insulating oxide film and second polysilicon resistance film.