The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2004
Filed:
Aug. 21, 2000
Kimitoshi Sato, Hyogo, JP;
Fumitoshi Yamamoto, Hyogo, JP;
Hiroshi Onoda, Hyogo, JP;
Yasunori Yamashita, Hyogo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A base of a low breakdown voltage npn bipolar transistor has p diffusion layers. A field insulating layer is formed on the p diffusion layer located between the p diffusion layer and an emitter, while the p diffusion layer encloses the surface of the emitter and has a window part immediately under the emitter. Thus, a semiconductor device and a method of fabricating the same capable of suppressing dispersion of a current amplification factor h in a wafer plane of the low breakdown voltage transistor and fabricating the low breakdown voltage transistor and a high breakdown voltage transistor through simple steps are obtained.