Company Filing History:

13 out of 21,351

Mitsubishi Denki Kabushiki Kaisha

patents

1 out of 3,781

Renesas Technology Corp.

patents

Years Active: 1990-2004

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14 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6693344 - Semiconductor device having low and high breakdown voltage transistors (2004-02-17),

2. 6387745 - Method of making a semiconductor device having a polydiode element (2002-05-14),

3. 6180996 - Semiconductor device comprising a polydiode element (2001-01-30),

4. 6172397 - Non-volatile semiconductor memory device (2001-01-09),

5. 5994733 - Nonvolatile semiconductor memory device and method of fabricating the (1999-11-30),

6. 5898606 - Electrically programmable and erasable nonvolatile semiconductor memory (1999-04-27),

7. 5877524 - Non-volatile semiconductor memory device (1999-03-02),

8. 5745417 - Electrically programmable and erasable nonvolatile semiconductor memory (1998-04-28),

9. 5659505 - Electrically programmable and erasable nonvolatile semiconductor memory (1997-08-19),

10. 5538912 - Method of making memory cells with peripheral transistors (1996-07-23),

11. 5400278 - Semiconductor memory device and method of manufacturing the same (1995-03-21),

12. 5338957 - Nonvolatile semiconductor device and a method of manufacturing thereof (1994-08-16),

13. 5273935 - Method of controlling etching with a focused charged beam by detecting (1993-12-28),

14. 4952421 - Method for repairing a pattern (1990-08-28),

Title: Hiroshi Onoda: Innovator in Semiconductor Technology

Introduction

Hiroshi Onoda is a prominent inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 14 patents. His work has focused on developing innovative semiconductor devices that enhance performance and reliability.

Latest Patents

One of his latest patents is a semiconductor device featuring low and high breakdown voltage transistors. This invention includes a base of a low breakdown voltage npn bipolar transistor with p diffusion layers. A field insulating layer is formed on the p diffusion layer located between the p diffusion layer and an emitter. This design helps suppress the dispersion of the current amplification factor h in a wafer plane of the low breakdown voltage transistor. Another notable patent is a method of making a semiconductor device that includes a polydiode element. In this method, an aluminum wire is connected to a P-type layer of the polydiode element through a resistive element, ensuring the device's resistance to surge or contamination.

Career Highlights

Hiroshi Onoda has worked with several notable companies throughout his career. He has been associated with Mitsubishi Denki Kabushiki Kaisha and Renesas Technology Corporation. His experience in these organizations has contributed to his expertise in semiconductor technology.

Collaborations

Some of his notable coworkers include Natsuo Ajika and Yuichi Kunori. Their collaboration has likely played a role in advancing semiconductor innovations.

Conclusion

Hiroshi Onoda's contributions to semiconductor technology through his patents and collaborations highlight his importance in the field. His innovative approaches continue to influence the development of reliable semiconductor devices.

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