The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 1993
Filed:
Mar. 29, 1990
Applicant:
Inventors:
Hiroaki Morimoto, Itami, JP;
Hiroshi Onoda, Itami, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437173 ; 437225 ; 2504922 ;
Abstract
Accurate etching control using focused ion beams can be achieved if the etching is performed in accordance with a detection signal obtained by detecting an electric current passing from a semiconductor device to ground or secondary electrons generated when the charged beams are spirally applied to a predetermined area during the charged-beam scanning operation. Therefore, the end point of the process can be accurately detected and uniform processing results can be obtained. As a result, precise etching control can be performed and a reliable semiconductor device can be manufactured.