The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 1999
Filed:
Jan. 07, 1998
Applicant:
Inventors:
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257316 ; 257315 ; 257319 ; 257506 ; 257509 ;
Abstract
Each nonvolatile transistor comprises a floating gate electrode, an ONO film and a control gate electrode. An upper surface of a silicon oxide film is positioned at a height between upper and lower surfaces of the floating gate electrode. The control gate electrode continuously extends on the floating gate electrode and the silicon oxide film in a prescribed arrangement direction.