Company Filing History:
Years Active: 2004-2009
Title: The Innovations of Frederick Perry Giles
Introduction
Frederick Perry Giles is a notable inventor based in San Jose, California, recognized for his contributions to semiconductor technology. With a total of eight patents to his name, Giles has made significant advancements in the field of trench-gated MIS devices.
Latest Patents
One of his latest patents is titled "Trench-gated MIS device having thick polysilicon insulation layer at trench bottom and method of fabricating the same." This invention involves a trench-gated MIS semiconductor device where a slug of undoped polysilicon is deposited at the bottom of the trench. This design protects the gate oxide from high electric fields. The fabrication process includes several steps, such as growing a thick oxide layer, depositing an undoped polysilicon layer, and etching to form the plug. Another significant patent is "Self-aligned differential oxidation in trenches by ion implantation." This patent describes a method for forming a trench MOSFET by implanting an implant species into the trench, resulting in a thicker insulating layer at the bottom of the trench compared to the side walls.
Career Highlights
Giles has worked with prominent companies in the semiconductor industry, including Siliconix Incorporated and Vishay Siliconix. His work has contributed to the development of advanced semiconductor devices that are crucial for modern electronics.
Collaborations
Throughout his career, Frederick Perry Giles has collaborated with notable professionals in the field, including Kam Hong Lui and Mohamed N Darwish. These collaborations have further enhanced his innovative contributions to semiconductor technology.
Conclusion
Frederick Perry Giles is a distinguished inventor whose work in semiconductor technology has led to significant advancements in the industry. His patents reflect a deep understanding of the complexities involved in semiconductor device fabrication.