The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2006
Filed:
Jun. 25, 2002
Karl Lichtenberger, Sunnyvale, CA (US);
Frederick P. Giles, San Jose, CA (US);
Christiana Yue, Milpitas, CA (US);
Kyle Terrill, Santa Clara, CA (US);
Mohamed N. Darwish, Campbell, CA (US);
Deva Pattanayak, Cupertino, CA (US);
Kam Hong Lui, Santa Clara, CA (US);
Robert Q. Xu, Fremont, CA (US);
Kuo-in Chen, Los Altos, CA (US);
Karl Lichtenberger, Sunnyvale, CA (US);
Frederick P. Giles, San Jose, CA (US);
Christiana Yue, Milpitas, CA (US);
Kyle Terrill, Santa Clara, CA (US);
Mohamed N. Darwish, Campbell, CA (US);
Deva Pattanayak, Cupertino, CA (US);
Kam Hong Lui, Santa Clara, CA (US);
Robert Q. Xu, Fremont, CA (US);
Kuo-in Chen, Los Altos, CA (US);
Siliconix Incorporated, Santa Clara, CA (US);
Abstract
In accordance with the present invention, a trench MOSFET is formed by creating a trench in a semiconductor substrate. A portion of either a side wall of the trench or the bottom of the trench is implanted with an implant species. An insulating layer is then grown overlying the bottom and side wall of the trench. The implant species is selected such that the insulating layer grows more quickly on the bottom of the trench than on the side wall of the trench, resulting in a thicker insulating layer in the bottom of the trench than on the trench side walls.