The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2004
Filed:
Jun. 21, 2002
Ben Chan, San Francisco, CA (US);
Kam Hong Lui, Santa Clara, CA (US);
Christiana Yue, Milpitas, CA (US);
Ronald Wong, Millbrae, CA (US);
David Chang, Saratoga, CA (US);
Frederick P. Giles, San Jose, CA (US);
Kyle Terrill, Santa Clara, CA (US);
Mohamed N. Darwish, Campbell, CA (US);
Deva Pattanayak, Cupertino, CA (US);
Robert Q. Xu, Fremont, CA (US);
Kuo-in Chen, Los Altos, CA (US);
Siliconix Incorporated, Santa Clara, CA (US);
Abstract
A trench MOSFET is formed by creating a trench in a semiconductor substrate, then forming a barrier layer over a portion of the side wall of the trench. A thick insulating layer is deposited in the bottom of the trench. The barrier layer is selected such that the thick insulating layer deposits in the bottom of the trench at a faster rate than the thick insulating layer deposits on the barrier layer. Embodiments of the present invention avoid stress and reliability problems associated with thermal growth of insulating layers, and avoid problems with control of the shape and thickness of the thick insulating layer encountered when a thick insulating layer is deposited, then etched to the proper shape and thickness.