David Chang

Title: David Chang - Innovator in Semiconductor Technology

Introduction

David Chang is a notable inventor based in Saratoga, CA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of trench MOSFETs. His innovative approach has led to advancements that enhance the reliability and efficiency of semiconductor devices.

Latest Patents

David Chang holds a patent for "Thicker oxide formation at the trench bottom by selective oxide deposition." This invention involves creating a trench in a semiconductor substrate and forming a barrier layer over a portion of the trench's side wall. A thick insulating layer is then deposited at the bottom of the trench, which is designed to deposit at a faster rate than on the barrier layer. This method effectively avoids stress and reliability issues associated with thermal growth of insulating layers, while also addressing challenges related to the control of the shape and thickness of the insulating layer.

Career Highlights

David Chang is currently employed at Siliconix Incorporated, where he continues to work on innovative semiconductor solutions. His expertise in the field has positioned him as a valuable asset to the company and the industry at large.

Collaborations

David has collaborated with talented coworkers such as Ben Chan and Kam Hong Lui. Their combined efforts contribute to the advancement of semiconductor technologies and innovations.

Conclusion

David Chang's work in semiconductor technology exemplifies the spirit of innovation and problem-solving. His patent and contributions to Siliconix Incorporated highlight his commitment to enhancing the performance and reliability of semiconductor devices.