The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2005
Filed:
Mar. 26, 2002
Mohamed N. Darwish, Campbell, CA (US);
Christiana Yue, Milpitas, CA (US);
Frederick P. Giles, San Jose, CA (US);
Kam Hong Lui, Santa Clara, CA (US);
Kuo-in Chen, Los Altos, CA (US);
Kyle Terrill, Santa Clara, CA (US);
Deva N. Pattanayak, Cupertino, CA (US);
Mohamed N. Darwish, Campbell, CA (US);
Christiana Yue, Milpitas, CA (US);
Frederick P. Giles, San Jose, CA (US);
Kam Hong Lui, Santa Clara, CA (US);
Kuo-In Chen, Los Altos, CA (US);
Kyle Terrill, Santa Clara, CA (US);
Deva N. Pattanayak, Cupertino, CA (US);
Siliconix incorporated, Santa Clara, CA (US);
Abstract
The gate oxide layer of a trench MIS device includes a graduated transition region, where the thickness of the gate oxide layer decreases gradually from a thick section adjacent the bottom of the trench to a thin section adjacent the sidewall of the trench. The PN junction between the body and drain regions intersects the trench in the transition region. This structure allows for a greater margin of error in the placement of the PN junction during the manufacture of the device, since the intersection between the PN junction can be located anywhere in the transition region. The MIS device also has improved breakdown characteristics.