Francois Ibrahim Atallah

USPTO Granted Patents = 44 (Patent Applications = 7)

CIPO Patents = 1

EPO Patents = 6 (Patent Applications = 15)

Average Co-Inventor Count = 3.2

ph-index = 10

Forward Citations = 264(Granted Patents)

Location History:

Releigh, NC (US) (1992)
Raleigh, NC (US) (1989 - 2022)

Company Filing History:

23 out of 164,108

International Business Machines Corporation

patents

21 out of 41,326

Qualcomm Incorporated

patents

Years Active: 1989-2022

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44 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11270761 - Dual-mode high-bandwidth SRAM with self-timed clock circuit (2022-03-08),

2. 11031075 - High bandwidth register file circuit with high port counts for reduced bitline delay (2021-06-08),

3. 10978139 - Dual-mode high-bandwidth SRAM with self-timed clock circuit (2021-04-13),

4. 10658029 - High bandwidth double-pumped memory (2020-05-19),

5. 10622043 - Multi-pump memory system access circuits for sequentially executing parallel memory operations (2020-04-14),

6. 10424392 - Read-assist circuits for memory bit cells employing a P-type field-effect transistor (PFET) read port(s), and related memory systems and methods (2019-09-24),

7. 10394471 - Adaptive power regulation methods and systems (2019-08-27),

8. 10224084 - Wordline negative boost write-assist circuits for memory bit cells employing a P-type field-effect transistor (PFET) write port(s), and related systems and methods (2019-03-05),

9. 10163490 - P-type field-effect transistor (PFET)-based sense amplifiers for reading PFET pass-gate memory bit cells, and related memory systems and methods (2018-12-25),

10. 10115481 - Read-assist circuits for memory bit cells employing a P-type field-effect transistor (PFET) read port(s), and related memory systems and methods (2018-10-30),

11. 10026456 - Bitline positive boost write-assist circuits for memory bit cells employing a P-type Field-Effect transistor (PFET) write port(s), and related systems and methods (2018-07-17),

12. 9984730 - Negative supply rail positive boost write-assist circuits for memory bit cells employing a P-type field-effect transistor (PFET) write port(s), and related systems and methods (2018-05-29),

13. 9947406 - Dynamic tag compare circuits employing P-type field-effect transistor (PFET)-dominant evaluation circuits for reduced evaluation time, and related systems and methods (2018-04-17),

14. 9940992 - Leakage-aware activation control of a delayed keeper circuit for a dynamic read operation in a memory bit cell (2018-04-10),

15. 9842634 - Wordline negative boost write-assist circuits for memory bit cells employing a P-type field-effect transistor (PFET) write port(s), and related systems and methods (2017-12-12),

Title: **Francois Ibrahim Atallah: Innovator in High-Bandwidth Memory Technologies**

Introduction

Francois Ibrahim Atallah, based in Raleigh, NC, has made significant contributions to the field of memory technology through his innovations and patents. With a remarkable portfolio of 44 patents, he stands out as a leading inventor in high-performance memory solutions.

Latest Patents

Among his latest groundbreaking inventions, Atallah has developed a "Dual-mode high-bandwidth SRAM with self-timed clock circuit." This innovative memory system incorporates a self-timed clock circuit that asserts the sense enable signal for a sense amplifier efficiently. It operates in two modes: a low-bandwidth read mode, where the sense enable signal is asserted just once per memory clock cycle, and a high-bandwidth read mode, allowing for rapid successions of sensing bits from multiplexed columns.

Additionally, he has patented a "High bandwidth register file circuit with high port counts for reduced bitline delay." This circuit effectively minimizes the shared local read bitline RC delay, enabling ultra-high performance register files to function with numerous ports without performance degradation.

Career Highlights

Francois has built a distinguished career working with industry giants such as International Business Machines Corporation (IBM) and Qualcomm Incorporated. His tenure at these companies has allowed him to spearhead numerous projects that advance memory technology and improve data processing capabilities across various applications.

Collaborations

Throughout his career, Atallah has collaborated with distinguished individuals such as Keith Alan Bowman and Hoan Huu Nguyen. These partnerships have fostered innovative thinking and contributed to the success of the various projects they undertook together, further emphasizing the collaborative nature of advancements in technology.

Conclusion

With his deep expertise and innovative spirit, Francois Ibrahim Atallah continues to drive advancements in the realm of memory technologies. His contributions through patents not only highlight his inventive prowess but also offer pivotal solutions that enhance performance in modern computing systems.

This text is generated by artificial intelligence and may not be accurate.