The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Sep. 23, 2015
Qualcomm Incorporated, San Diego, CA (US);
Hoan Huu Nguyen, Durham, NC (US);
Francois Ibrahim Atallah, Raleigh, NC (US);
Keith Alan Bowman, Morrisville, NC (US);
David Joseph Winston Hansquine, Raleigh, NC (US);
Jihoon Jeong, Cary, NC (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
P-type Field-effect Transistor (PFET)-based sense amplifiers for reading PFET pass-gate memory bit cells ('bit cells'). Related methods and systems are also disclosed. Sense amplifiers are provided in a memory system to sense bit line voltage(s) of the bit cells for reading the data stored in the bit cells. It has been observed that as node technology is scaled down in size, PFET drive current (i.e., drive strength) exceeds N-type Field-effect Transistor (NFET) drive current due for like-dimensioned FETs. In this regard, in one aspect, PFET-based sense amplifiers are provided in a memory system to increase memory read times to the bit cells, and thus improve memory read performance.