Raleigh, NC, United States of America

David Joseph Winston Hansquine

USPTO Granted Patents = 12 

 

Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 2016-2019

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12 patents (USPTO):Explore Patents

Title: **Innovator Spotlight: David Joseph Winston Hansquine**

Introduction

David Joseph Winston Hansquine is a noteworthy inventor based in Raleigh, NC. He has achieved a commendable portfolio with a total of 12 patents to his name, contributing significantly to advancements in memory bit cell technology. His work focuses on enhancing memory systems and methods through innovative circuit designs.

Latest Patents

Among his recent patents are two groundbreaking innovations in the realm of memory technologies. The first patent, titled "Read-assist circuits for memory bit cells employing a P-type field-effect transistor (PFET) read port(s)," addresses the challenges associated with scaling down node technology. Hansquine's invention proposes the use of PFET read ports to improve memory read performance and mitigate potential read disturb conditions. This advancement aims to enhance memory read times significantly.

The second patent focuses on "Wordline negative boost write-assist circuits for memory bit cells employing a P-type field-effect transistor (PFET) write port(s)." This invention proposes methods to strengthen PFET access transistors in memory bit cells, thereby reducing memory write times and improving overall memory performance. Both patents reflect Hansquine's commitment to pioneering solutions in the field of semiconductor memory technology.

Career Highlights

David Joseph Winston Hansquine is currently employed at Qualcomm Incorporated, a leading global semiconductor company. His role allows him to collaborate closely with innovative minds in the technology sector. Over his career, he has made significant contributions to advancements in memory technology, solidifying his reputation as a skilled inventor.

Collaborations

Throughout his career, Hansquine has worked alongside esteemed colleagues, including Francois Ibrahim Atallah and Jihoon Jeong. Their collaborations have likely fostered an environment of creativity and innovation, leading to the development of cutting-edge technologies in semiconductor memory.

Conclusion

David Joseph Winston Hansquine stands out as a leading inventor in the field of memory technology. His recent patents reflect a keen understanding of the challenges faced in modern technology and demonstrate his ability to craft innovative solutions. With a robust career at Qualcomm Incorporated and fruitful collaborations, Hansquine continues to be a vital contributor to the evolution of memory systems.

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