The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Sep. 21, 2018
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Hoan Huu Nguyen, Cary, NC (US);

Francois Ibrahim Atallah, Raleigh, NC (US);

Keith Alan Bowman, Morrisville, NC (US);

Hari Rao, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4091 (2006.01); G11C 7/06 (2006.01); G11C 11/419 (2006.01); G11C 11/408 (2006.01); G11C 8/08 (2006.01); G11C 8/10 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01); G11C 7/065 (2013.01); G11C 8/08 (2013.01); G11C 8/10 (2013.01); G11C 11/4085 (2013.01); G11C 11/4091 (2013.01); G11C 16/26 (2013.01);
Abstract

Certain aspects of the present disclosure provide apparatus and methods for performing memory read operations. One example method generally includes precharging a plurality of memory columns during a precharging phase of a read access cycle. The method also includes sensing first data stored in a first memory cell of a first memory column of the plurality of memory columns during a memory read phase of the read access cycle, and sensing second data stored in a second memory cell of a second memory column of the plurality of memory columns during the same memory read phase of the read access cycle.


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