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For the Inventor, By the Inventor

San Jose, CA, United States of America

Foroozan Sarah Koushan

This inventor holds 24 USPTO granted patents and 2 published patent applications, primarily in Resistive Memory Devices. Top assignees: Adesto Technologies Corporation, Micron Technology Incorporated, Axon Technologies Corporation. Active years: 2014-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Foroozan Sarah Koushan. Retrieved from https://idiyas.com/inventor/foroozan-sarah-koushan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 24 

% Patents Active = 91.7

Average Co-Inventor Count = 3.0

ph-index = 5

Forward Citations = 82(Granted Patents)


Location History:

  • San Jose, CA (US) (2014 - 2023)
  • Fremont, CA (US) (2022 - 2023)

Company Filing History:

goldMedal16 out of 129 
 
Adesto Technologies Corporation
 patents
silverMedal8 out of 39,253 
 
Micron Technology Incorporated
 patents
bronzeMedal2 out of 36 
 
Axon Technologies Corporation
 patents
4. 1 out of 1 
 
Adesto Technologies France Sarl
 patent
where one patent can have more than one assignee

Years Active: 2014-2023

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Areas of Expertise:
Memory Devices
Resistive Switching
Nonvolatile Memory
Programmable Impedance
Erase Operations
Write Disturb Mitigation
Reflow Process
Pseudo Unclonable Functions
Conductive Structures
Solid Electrolyte
Access Devices
Formation Methods
24 patents (USPTO):Explore Patents
1. 11735267 - Managing pre-programming of a memory device for a reflow process (2023-08-22),
2. 11694727 - Memory devices including heaters (2023-07-04),
3. 11646083 - Multi-stage erase operation for a memory device (2023-05-09),
4. 11609712 - Write operations to mitigate write disturb (2023-03-21),
5. 11537754 - Pseudo physically unclonable functions (PUFS) using one or more addressable arrays of elements having random/pseudo-random values (2022-12-27),
6. 11423990 - Multi-stage erase operation for a memory device (2022-08-23),
7. 11417368 - Memory devices including heaters (2022-08-16),
8. 11069412 - Managing pre-programming of a memory device for a reflow process (2021-07-20),
9. 11037638 - Write operations to mitigate write disturb (2021-06-15),
10. 9818939 - Resistive switching devices having a switching layer and an intermediate electrode layer and methods of formation thereof (2017-11-14),
11. 9734902 - Resistive memory device with ramp-up/ramp-down program/erase pulse (2017-08-15),
12. 9711719 - Nonvolatile memory elements having conductive structures with semimetals and/or semiconductors (2017-07-18),
13. 9431101 - Resistive devices and methods of operation thereof (2016-08-30),
14. 9373786 - Two terminal resistive access devices and methods of formation thereof (2016-06-21),
15. 9305643 - Solid electrolyte based memory devices and methods having adaptable read threshold levels (2016-04-05),

Title: The Innovative Journey of Foroozan Sarah Koushan

Introduction: Foroozan Sarah Koushan is a pioneering inventor based in San Jose, California, known for her groundbreaking contributions to various technological fields.

Latest Patents: Koushan holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing her diverse range of expertise and innovation.

Career Highlights: With a background in engineering and a passion for problem-solving, Koushan has led successful projects that have revolutionized industries and improved the lives of many.

Collaborations: Throughout her career, Koushan has collaborated with leading research institutions, universities, and tech companies to bring her ideas to life and make a lasting impact on society.

Conclusion: Foroozan Sarah Koushan's relentless pursuit of innovation and her commitment to pushing the boundaries of technology make her a true trailblazer in the world of inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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