The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Mar. 26, 2013
Applicant:
Adesto Technologies Corporation, Sunnyvale, CA (US);
Inventors:
Venkatesh P. Gopinath, Fremont, CA (US);
Foroozan Sarah Koushan, San Jose, CA (US);
Derric Jawaher Herman Lewis, Sunnyvale, CA (US);
Assignee:
Adesto Technologies Corporation, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 11/56 (2006.01); G11C 16/28 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 11/5614 (2013.01); G11C 13/0011 (2013.01); G11C 13/0035 (2013.01); G11C 13/0064 (2013.01); G11C 13/0069 (2013.01); G11C 16/28 (2013.01);
Abstract
A method can include determining at least one use characteristic for the memory cells comprising a solid electrolyte, the use characteristic corresponding to a number of times the memory cells have been programmed to at least one impedance level; and adjusting a read threshold level for the memory cells based on at least the use characteristic, the read threshold level determining data values stored in the memory cells in a read operation.