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For the Inventor, By the Inventor

Hsinchu, Taiwan

Feng-Ching Chu

USPTO Granted Patents = 46 

Average Co-Inventor Count = 3.7

ph-index = 3

Forward Citations = 30(Granted Patents)


Location History:

  • Pingtung, TW (2020 - 2021)
  • Hsinchu, TW (2019 - 2024)
  • Pingtung County, TW (2019 - 2024)

Company Filing History:

goldMedal46 out of 40,780 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2019-2025

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Areas of Expertise:
Semiconductor Device
Epitaxial Structures
FinFET Devices
Memory Device
Integrated Circuit
Source/Drain Features
Gate-All-Around Devices
3-D Semiconductor Memory
Phosphorus-Doped Epitaxial Features
Cut EPI Process
Asymmetric Source/Drain
Backside Contact
46 patents (USPTO):Explore Patents
1. 12501601 - Method for forming different types of devices (2025-12-16),
2. 12471306 - Semiconductor device active region profile and method of forming the same (2025-11-11),
3. 12432990 - Epitaxial source/drain feature with enlarged lower section interfacing with backside via (2025-09-30),
4. 12408377 - Semiconductor device structure with backside contact (2025-09-02),
5. 12408363 - Semiconductor device with phosphorus-doped epitaxial features (2025-09-02),
6. 12408347 - Method for forming a 3-D semiconductor memory structure comprising horizontal and vertical conductive lines (2025-09-02),
7. 12369383 - Semiconductor structure with gate-all-around devices and stacked FinFET devices (2025-07-22),
8. 12356662 - Asymmetric source/drain for backside source contact (2025-07-08),
9. 12324201 - Integrated circuit device with source/drain barrier (2025-06-03),
10. 12279451 - Semiconductor device including source/drain feature with multiple epitaxial layers (2025-04-14),
11. 12272729 - Asymmetric source/drain for backside source contact (2025-04-08),
12. 12245432 - Memory device and manufacturing method thereof (2025-03-04),
13. 12211749 - Cut EPI process and structures (2025-01-28),
14. 12107165 - Semiconductor device structure with cap layer (2024-10-01),
15. 12068204 - Methods of forming epitaxial structures in fin-like field effect transistors (2024-08-20),

Title: Inventor Feng-Ching Chu

Introduction: Feng-Ching Chu is a renowned inventor based in Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Feng-Ching Chu holds several patents in various technological domains, showcasing his continuous dedication to advancing the industry.

Career Highlights: With a career spanning over two decades, Feng-Ching Chu has worked tirelessly to develop cutting-edge solutions that have revolutionized the way we interact with technology. His innovative mindset and passion for creating have led to the successful implementation of numerous projects.

Collaborations: Throughout his career, Feng-Ching Chu has collaborated with leading tech companies and research institutions, fostering a culture of innovation and knowledge-sharing within the industry. His collaborative efforts have resulted in the development of groundbreaking technologies that have had a lasting impact on society.

Conclusion: Feng-Ching Chu's relentless pursuit of innovation and his commitment to pushing the boundaries of technology make him a true pioneer in the field of inventions. His work continues to inspire future generations of inventors and innovators worldwide.

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