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Feng-Ching Chu

This inventor holds 47 USPTO granted patents and 19 published patent applications, primarily in Semiconductor Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2019-2026.

USPTO Granted Patents = 47 (Patent Applications = 19)

% Patents Active = 100.0

Average Co-Inventor Count = 3.7

ph-index = 3

Forward Citations = 31(Granted Patents)

Location History:

Pingtung, TW (2020 - 2021)
Hsinchu, TW (2019 - 2024)
Pingtung County, TW (2019 - 2024)

Company Filing History:

47 out of 42,679

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2019-2026

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Areas of Expertise:

Semiconductor Structure

Epitaxial Features

FinFET Devices

Memory Device

Source/Drain Barrier

3D Semiconductor Memory

Gate-All-Around

Active Region Profile

Integrated Circuit

Device Fabrication

Phosphorus-Doped

Cut EPI Process

47 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12588283 - Semiconductor structure and related methods (2026-03-24),

2. 12501601 - Method for forming different types of devices (2025-12-16),

3. 12471306 - Semiconductor device active region profile and method of forming the same (2025-11-11),

4. 12432990 - Epitaxial source/drain feature with enlarged lower section interfacing with backside via (2025-09-30),

5. 12408377 - Semiconductor device structure with backside contact (2025-09-02),

6. 12408363 - Semiconductor device with phosphorus-doped epitaxial features (2025-09-02),

7. 12408347 - Method for forming a 3-D semiconductor memory structure comprising horizontal and vertical conductive lines (2025-09-02),

8. 12369383 - Semiconductor structure with gate-all-around devices and stacked FinFET devices (2025-07-22),

9. 12356662 - Asymmetric source/drain for backside source contact (2025-07-08),

10. 12324201 - Integrated circuit device with source/drain barrier (2025-06-03),

11. 12279451 - Semiconductor device including source/drain feature with multiple epitaxial layers (2025-04-14),

12. 12272729 - Asymmetric source/drain for backside source contact (2025-04-08),

13. 12245432 - Memory device and manufacturing method thereof (2025-03-04),

14. 12211749 - Cut EPI process and structures (2025-01-28),

15. 12107165 - Semiconductor device structure with cap layer (2024-10-01),

Title: Inventor Feng-Ching Chu

Introduction: Feng-Ching Chu is a renowned inventor based in Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Feng-Ching Chu holds several patents in various technological domains, showcasing his continuous dedication to advancing the industry.

Career Highlights: With a career spanning over two decades, Feng-Ching Chu has worked tirelessly to develop cutting-edge solutions that have revolutionized the way we interact with technology. His innovative mindset and passion for creating have led to the successful implementation of numerous projects.

Collaborations: Throughout his career, Feng-Ching Chu has collaborated with leading tech companies and research institutions, fostering a culture of innovation and knowledge-sharing within the industry. His collaborative efforts have resulted in the development of groundbreaking technologies that have had a lasting impact on society.

Conclusion: Feng-Ching Chu's relentless pursuit of innovation and his commitment to pushing the boundaries of technology make him a true pioneer in the field of inventions. His work continues to inspire future generations of inventors and innovators worldwide.

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