The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

Jun. 17, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Feng-Ching Chu, Pingtung County, TW;

Wei-Yang Lee, Taipei, TW;

Chia-Pin Lin, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 86/00 (2025.01); H10D 86/01 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6729 (2025.01); H10D 30/031 (2025.01); H10D 86/00 (2025.01); H10D 86/01 (2025.01); H10D 30/6735 (2025.01); H10D 30/6737 (2025.01); H10D 30/6743 (2025.01); H10D 30/6757 (2025.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a stack of channel structures and a first epitaxial structure and a second epitaxial structure adjacent to opposite sides of the channel structures. The semiconductor device structure also includes a gate stack wrapped around the channel structures and a backside conductive contact connected to the second epitaxial structure. The second epitaxial structure is between a top of the backside conductive contact and a top of the gate stack. The semiconductor device structure further includes an etch stop layer extending along a sidewall of the backside conductive contact and a bottom of the gate stack.


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