The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Aug. 27, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Feng-Ching Chu, Pingtung County, TW;

I-Hsieh Wong, Hsinchu, TW;

Wei-Yang Lee, Taipei City, TW;

Chia-Pin Lin, Hsinchu County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 86/00 (2025.01); H01L 21/02 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 86/01 (2025.01);
U.S. Cl.
CPC ...
H10D 86/215 (2025.01); H01L 21/02233 (2013.01); H01L 21/02271 (2013.01); H10D 30/031 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 86/011 (2025.01);
Abstract

Methods and associated devices including the fabrication of a semiconductor structure that provides a silicon-on-insulator substrate. The semiconductor structure may be formed by providing a base substrate, forming a sacrificial layer over the base structure, and forming a semiconductor layer over the sacrificial layer. The sacrificial layer is removed to form a void that is filled with oxide. The semiconductor structure includes a dielectric support feature extending through the semiconductor and oxide layers and/or a portion of the oxide layer extends to the surface of the semiconductor layer.


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