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For the Inventor, By the Inventor

Tempe, AZ, United States of America

Fei Wang

This inventor holds 8 USPTO granted patents and 6 published patent applications. Top assignee: Asm IP Holding B.v.. Active years: 2022-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fei Wang. Retrieved from https://idiyas.com/inventor/fei-wang-a8lcifbx

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 8 

% Patents Active = 100.0

Average Co-Inventor Count = 3.8

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:

goldMedal8 out of 1,318 
 
Asm IP Holding B.v.
 patents

Years Active: 2022-2026

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8 patents (USPTO):Explore Patents
1. 12757665 - Semiconductor processing preclean methods and apparatus (2026-10-06),
2. 12685061 - Apparatus and method for removal of oxide and carbon from semiconductor films in a single processing chamber (2026-07-14),
3. 12598928 - Apparatus and methods for selectively etching silicon oxide films (2026-04-07),
4. 12522916 - Systems and methods for processing a silicon surface using multiple radical species (2026-01-13),
5. 12272527 - Apparatus for use with hydrogen radicals and method of using same (2025-04-08),
6. 12112938 - Semiconductor processing preclean methods and apparatus (2024-10-08),
7. 11437241 - Apparatus and methods for selectively etching silicon oxide films (2022-09-06),
8. 11315794 - Apparatus and methods for selectively etching films (2022-04-26),

Title: Fei Wang: Innovator in Silicon Surface Processing

Introduction

Fei Wang is a prominent inventor based in Tempe, AZ (US). He has made significant contributions to the field of silicon surface processing, holding a total of 8 patents. His innovative work focuses on improving methods for processing silicon surfaces, which is crucial in various technological applications.

Latest Patents

Fei Wang's latest patents include groundbreaking technologies. One of his notable patents is titled "Systems and methods for processing a silicon surface using multiple radical species." This method involves using a first radical species to remove contamination and roughen the silicon surface, followed by a second radical species to smooth the roughened surface. Another significant patent is "Apparatus for use with hydrogen radicals and method of using same." This invention provides a system and method for removing both carbon-based and oxygen-based contaminants from a substrate within a single process chamber.

Career Highlights

Fei Wang is currently associated with Asm IP Holding B.V., where he continues to develop innovative solutions in semiconductor processing. His expertise in the field has led to advancements that enhance the efficiency and effectiveness of silicon surface treatments.

Collaborations

Fei Wang has collaborated with talented individuals such as Aditya Walimbe and Xing Lin. These partnerships have fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

Fei Wang's contributions to silicon surface processing through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to pave the way for advancements in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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