The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2022

Filed:

Oct. 14, 2020
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Fei Wang, Tempe, AZ (US);

Aditya Walimbe, Tempe, AZ (US);

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/3244 (2013.01); H01L 21/02046 (2013.01); H01L 21/67069 (2013.01);
Abstract

An apparatus and methods for selectively etching a particular layer are disclosed. The apparatus and methods are directed towards maintaining the etch rate of the particular layer, while keeping intact a non-etched layer. The etching process may be accomplished by co-flowing a hydrogen precursor gas and a fluorine precursor gas into a remote plasma unit. A resulting gas mixture may then be flowed onto the substrate having a silicon oxide layer as an etch layer and a silicon nitride layer as a non-etched layer, for example. A reaction between the resulting gas mixture and the particular layer takes place, resulting in etching of the silicon oxide layer while maintaining the silicon nitride layer in the above example.


Find Patent Forward Citations

Quick Actions:

Wang, Fei. (2022). Apparatus and methods for selectively etching films (U.S. Patent No. 11315794). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11315794

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…