The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Dec. 19, 2022
Applicant:
Asm Ip Holding, B.v., Almere, NL;
Inventors:
Gregory Deye, Phoenix, AZ (US);
Caleb Miskin, Mesa, AZ (US);
Hichem M'saad, Paradise Valley, AZ (US);
Steven Reiter, Phoenix, AZ (US);
Alexandros Demos, Scottsdale, AZ (US);
Fei Wang, Phoenix, AZ (US);
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/02 (2006.01); C09K 13/00 (2006.01); C23C 16/24 (2006.01); C23F 1/12 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
C23C 16/0245 (2013.01); C09K 13/00 (2013.01); C23C 16/24 (2013.01); C23F 1/12 (2013.01); H01J 37/32357 (2013.01); H01L 21/02057 (2013.01); H01L 21/02312 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02532 (2013.01); H01L 21/02634 (2013.01); H01L 21/02658 (2013.01); H01L 21/3065 (2013.01); H01L 21/67028 (2013.01); H01J 2237/334 (2013.01); H01J 2237/335 (2013.01);
Abstract
A method of processing a silicon surface includes using a first radical species to remove contamination from the surface and to roughen the surface; and using a second radical species to smooth the roughened surface. Reaction systems for performing such a method, and silicon surfaces prepared using such a method, also are provided.