The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Jul. 28, 2022
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Xing Lin, Chandler, AZ (US);
Peipei Gao, Tempe, AZ (US);
Fei Wang, Tempe, AZ (US);
John Tolle, Gilbert, AZ (US);
Bubesh Babu Jotheeswaran, Gilbert, AZ (US);
Vish Ramanathan, Tempe, AZ (US);
Eric Hill, Groveland, MA (US);
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 70/00 (2026.01); B08B 5/00 (2006.01); B08B 7/00 (2006.01); H01J 37/32 (2006.01); H10P 50/28 (2026.01); H10P 72/00 (2026.01);
U.S. Cl.
CPC ...
H10P 70/12 (2026.01); B08B 5/00 (2013.01); B08B 7/0035 (2013.01); H01J 37/32357 (2013.01); H01J 37/32449 (2013.01); H10P 50/287 (2026.01); H10P 72/0402 (2026.01);
Abstract
A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single process chamber.