The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2024
Filed:
Mar. 17, 2022
Asm Ip Holding B.v., Almere, NL;
Chuang Wei, Chandler, AZ (US);
Aditya Chaudhury, Tempe, AZ (US);
Prahlad Kulkarni, Tempe, AZ (US);
Xing Lin, Chandler, AZ (US);
Xiaoda Sun, Tempe, AZ (US);
Woo Jung Shin, Chandler, AZ (US);
Bubesh Babu Jotheeswaran, Gilbert, AZ (US);
Fei Wang, Portland, OR (US);
Qu Jin, Chandler, AZ (US);
Aditya Walimbe, Tempe, AZ (US);
Rajeev Reddy Kosireddy, Tempe, AZ (US);
Yen Chun Fu, Tempe, AZ (US);
Amin Azimi, Phoenix, AZ (US);
ASM IP Holding B.V., Almere, NL;
Abstract
In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.