Emi Kawashima, an accomplished inventor based in Sodegaura, Japan, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 10 patents, Kawashima continues to push the boundaries of innovation, particularly in crystalline oxide thin films and Schottky barrier diodes.

Latest Patents

Kawashima's latest patents include groundbreaking technologies such as the crystalline oxide thin film and the Schottky barrier diode. The crystalline oxide thin film features a composition containing an indium (In) element as the main component along with gallium (Ga) and a lanthanide (Ln) element. The innovation is characterized by an average crystal grain size of 0.05 μm to 0.5 μm. Her Schottky barrier diode is built on a silicon (Si) substrate and integrates an oxide semiconductor layer, which exhibits a significant band gap ranging from 3.0 eV to 5.6 eV. This innovation plays a crucial role in enhancing the performance of electronic devices.

Career Highlights

Emi Kawashima is currently employed at Idemitsu Kosan Company, Limited, where she continues her research and development endeavors. Her work in the semiconductor domain has garnered attention for its potential applications in various electronic technologies. Kawashima's technical expertise and innovative mindset have positioned her as a leading figure in her field.

Collaborations

Kawashima collaborates closely with esteemed colleagues, including Shigekazu Tomai and Masatoshi Shibata. These partnerships not only facilitate the exchange of ideas but also foster a creative environment that contributes to groundbreaking developments in their projects.

Conclusion

Emi Kawashima's journey as an inventor showcases her dedication to advancing semiconductor technologies. Her contributions, through numerous patents, highlight her innovative spirit and commitment to research. As she continues her work at Idemitsu Kosan Company, Limited, the technology landscape eagerly anticipates her next breakthrough.

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