The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2021
Filed:
Oct. 11, 2017
Applicant:
Idemitsu Kosan Co., Ltd., Tokyo, JP;
Inventors:
Yuki Tsuruma, Sodegaura, JP;
Emi Kawashima, Sodegaura, JP;
Yoshikazu Nagasaki, Sodegaura, JP;
Takashi Sekiya, Sodegaura, JP;
Yoshihiro Ueoka, Sodegaura, JP;
Assignee:
IDEMITSU KOSAN CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/47 (2006.01); H01L 29/78 (2006.01); H01L 27/146 (2006.01); H01L 31/108 (2006.01); H01L 29/872 (2006.01); H01L 31/07 (2012.01); H01L 29/812 (2006.01); H01L 31/10 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/47 (2013.01); H01L 27/146 (2013.01); H01L 29/24 (2013.01); H01L 29/247 (2013.01); H01L 29/78 (2013.01); H01L 29/786 (2013.01); H01L 29/812 (2013.01); H01L 29/872 (2013.01); H01L 31/07 (2013.01); H01L 31/10 (2013.01); H01L 31/108 (2013.01); Y02E 10/50 (2013.01);
Abstract
A structure including a metal oxide semiconductor layer and a noble metal oxide layer, wherein the metal oxide semiconductor layer and the noble metal oxide layer are adjacent to each other, and a film thickness of the noble metal oxide layer is more than 10 nm.