The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Mar. 26, 2020
Applicant:
Idemitsu Kosan Co., Ltd., Tokyo, JP;
Inventors:
Emi Kawashima, Sodegaura, JP;
Kazuyoshi Inoue, Sodegaura, JP;
Masashi Oyama, Sodegaura, JP;
Masatoshi Shibata, Sodegaura, JP;
Assignee:
IDEMITSU KOSAN CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/24 (2013.01); H01L 29/04 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 21/02667 (2013.01);
Abstract
A crystalline oxide thin film contains an In element, a Ga element and an Ln element, in which the In element is a main component, the Ln element is at least one element selected from the group consisting of La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and an average crystal grain size Dis in a range from 0.05 μm to 0.5 μm.