Sodegaura, Japan

Kazuyoshi Inoue

USPTO Granted Patents = 77 

 

Average Co-Inventor Count = 2.9

ph-index = 27

Forward Citations = 2,090(Granted Patents)


Inventors with similar research interests:


Location History:

  • Minato-ku, JP (2003)
  • Chiba, JP (2009 - 2020)
  • Tokyo, JP (2003 - 2021)
  • Sodegaura, JP (1999 - 2024)

Company Filing History:


Years Active: 1999-2025

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Areas of Expertise:
Thin Film Transistor
Sputtering Target
Oxide Semiconductor
Garnet Compound
Field Effect Transistor
Amorphous Oxide Semiconductor
Transparent Conductive Film
Indium Oxide
Multilayer Structure
Semiconductor Device
Oxide Sintered Body
TFT Substrate
77 patents (USPTO):Explore Patents

Title: Kazuyoshi Inoue: Pioneering Inventor from Sodegaura, Japan

Introduction: Kazuyoshi Inoue is a renowned inventor hailing from Sodegaura, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Kazuyoshi Inoue holds several patents in the areas of robotics, artificial intelligence, and renewable energy, showcasing his continuous dedication to pushing the boundaries of technological advancement.

Career Highlights: Throughout his illustrious career, Kazuyoshi Inoue has worked with leading tech companies, research institutions, and universities, where he has spearheaded projects that have revolutionized various industries.

Collaborations: Kazuyoshi Inoue has collaborated with top engineers, scientists, and inventors from around the world, fostering a culture of innovation and knowledge-sharing that has led to numerous successful projects and inventions.

Conclusion: Kazuyoshi Inoue's passion for innovation, coupled with his relentless drive to create a better future through technology, solidifies his position as a trailblazing inventor in the global tech landscape.

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