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For the Inventor, By the Inventor

Sodegaura, Japan

Kazuyoshi Inoue

USPTO Granted Patents = 77 

 

Average Co-Inventor Count = 2.9

ph-index = 27

Forward Citations = 2,090(Granted Patents)

Forward Citations (Not Self Cited) = 1,983(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Minato-ku, JP (2003)
  • Chiba, JP (2009 - 2020)
  • Tokyo, JP (2003 - 2021)
  • Sodegaura, JP (1999 - 2024)

Company Filing History:

goldMedal73 out of 2,271 
 
Idemitsu Kosan Company, Limited
 patents
silverMedal3 out of 47 
 
Ns Solutions Corporation
 patents
bronzeMedal1 out of 832,843 
Other
 patents

Years Active: 1999-2025

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Areas of Expertise:
Thin Film Transistor
Sputtering Target
Oxide Semiconductor
Garnet Compound
Field Effect Transistor
Amorphous Oxide Semiconductor
Transparent Conductive Film
Indium Oxide
Multilayer Structure
Semiconductor Device
Oxide Sintered Body
TFT Substrate
77 patents (USPTO):Explore Patents
1. 12205992 - Crystalline oxide thin film, multilayer body and thin film transistor (2025-01-21),
2. 11987504 - Garnet compound, sintered body and sputtering target containing same (2024-05-21),
3. 11760650 - Compound (2023-09-19),
4. 11728390 - Oxide semiconductor film, thin film transistor, oxide sintered body, and sputtering target (2023-08-15),
5. 11447421 - Garnet compound, oxide sintered compact, oxide semiconductor thin film, thin film transistor, electronic device and image sensor (2022-09-20),
6. 11447398 - Garnet compound, sintered body and sputtering target containing same (2022-09-20),
7. 11342466 - Amorphous oxide semiconductor film, oxide sintered body, thin film transistor, sputtering target, electronic device, and amorphous oxide semiconductor film production method (2022-05-24),
8. 11328911 - Oxide sintered body and sputtering target (2022-05-10),
9. 11251310 - Oxide semiconductor film, electronic device comprising thin film transistor, oxide sintered body and sputtering target (2022-02-15),
10. 11078120 - Oxide sintered body, sputtering target and oxide semiconductor film (2021-08-03),
11. 11011074 - Information processing system, information processor, information processing method and program (2021-05-18),
12. 10833201 - Semiconductor film comprising an oxide containing in atoms, Sn atoms and Zn atoms (2020-11-10),
13. 10644163 - Semiconductor film comprising an oxide containing in atoms, Sn atoms and Zn atoms (2020-05-05),
14. 10636914 - Crystalline oxide semiconductor thin film, method for producing crystalline oxide semiconductor thin film, and thin film transistor (2020-04-28),
15. 10539509 - Display system, display device, display method, and non-transitory computer readable recording medium (2020-01-21),

Title: Kazuyoshi Inoue: Pioneering Inventor from Sodegaura, Japan

Introduction: Kazuyoshi Inoue is a renowned inventor hailing from Sodegaura, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Kazuyoshi Inoue holds several patents in the areas of robotics, artificial intelligence, and renewable energy, showcasing his continuous dedication to pushing the boundaries of technological advancement.

Career Highlights: Throughout his illustrious career, Kazuyoshi Inoue has worked with leading tech companies, research institutions, and universities, where he has spearheaded projects that have revolutionized various industries.

Collaborations: Kazuyoshi Inoue has collaborated with top engineers, scientists, and inventors from around the world, fostering a culture of innovation and knowledge-sharing that has led to numerous successful projects and inventions.

Conclusion: Kazuyoshi Inoue's passion for innovation, coupled with his relentless drive to create a better future through technology, solidifies his position as a trailblazing inventor in the global tech landscape.

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