The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2022
Filed:
Feb. 15, 2018
Applicant:
Idemitsu Kosan Co., Ltd., Tokyo, JP;
Inventors:
Kazuyoshi Inoue, Sodegaura, JP;
Masatoshi Shibata, Sodegaura, JP;
Assignee:
IDEMITSU KOSAN CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/363 (2006.01); H01L 29/78 (2006.01); H01L 29/80 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); C04B 35/01 (2006.01); H01L 29/786 (2006.01); C04B 35/626 (2006.01); C04B 35/64 (2006.01); H01L 21/02 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78693 (2013.01); C04B 35/01 (2013.01); C04B 35/6261 (2013.01); C04B 35/64 (2013.01); C23C 14/08 (2013.01); C23C 14/34 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/3293 (2013.01); C04B 2235/604 (2013.01); C04B 2235/6567 (2013.01);
Abstract
An oxide semiconductor film contains In, Ga, and Sn at respective atomic ratios of 0.01≤Ga/(In+Ga+Sn)≤0.30 . . . (1), 0.01≤Sn/(In+Ga+Sn)≤0.40 . . . (2), and 0.55≤In/(In+Ga+Sn)≤0.98 . . . (3), and a rare-earth element X at an atomic ratio of 0.03≤X/(In+Ga+Sn+X)≤0.25 . . . (4).