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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11342466 B1

PDFFull Text
Date of Patent:
May. 24, 2022

Filed:

Jan. 31, 2018

Amorphous oxide semiconductor film, oxide sintered body, thin film transistor, sputtering target, electronic device, and amorphous oxide semiconductor film production method

Applicant:

Idemitsu Kosan Co., Ltd., Tokyo, JP;

Inventors:

Kazuyoshi Inoue, Sodegaura, JP;

Masatoshi Shibata, Sodegaura, JP;

Assignee:

IDEMITSU KOSAN CO., LTD., Tokyo, JP;

Attorney:

Foley & Lardner LLP

Primary Examiner:

Robert G Bachner

Int. Cl.
CPC ...
H01L 29/786 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); H01L 21/203 (2006.01); H01L 27/12 (2006.01); C04B 35/01 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78693 (2013.01); C04B 35/01 (2013.01); C23C 14/086 (2013.01); C23C 14/34 (2013.01); C23C 14/3414 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 21/203 (2013.01); H01L 27/1222 (2013.01); H01L 27/1225 (2013.01); H01L 29/66439 (2013.01); H01L 29/66969 (2013.01); C04B 2235/761 (2013.01);
Abstract

A sintered oxide includes an InOcrystal, and a crystal A whose diffraction peak is in an incidence angle (2θ) range defined by (A) to (F) below as measured by X-ray (Cu-K α ray) diffraction measurement: 31.0 to 34.0 degrees . . . (A); 36.0 to 39.0 degrees . . . (B); 50.0 to 54.0 degrees . . . (C); 53.0 to 57.0 degrees . . . (D); 9.0 to 11.0 degrees . . . (E); and 19.0 to 21.0 degrees . . . (F).

Find Patent Forward Citations

Inoue, Kazuyoshi. (2022). Amorphous oxide semiconductor film, oxide sintered body, thin film transistor, sputtering target, electronic device, and amorphous oxide semiconductor film production method (U.S. Patent No. 11342466). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11342466

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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