Idemitsu Kosan Company, Limited

Ns Solutions Corporation

Other

Kazuyoshi Inoue

Koki Yano

Shigekazu Tomai

Nobuo Tanaka

Hirokazu Kawashima

Masashi Kasami

Futoshi Utsuno

Masatoshi Shibata

Tokie Tanaka, Legal Representative

Masato Matsubara

Akira Kaijo

Satoshi Umeno

Katsunori Honda

Hisayuki Kawamura

Kota Terai

Shigeo Matsuzaki

Emi Kawashima

Tadao Shibuya

Hiroshi Tokailin

Yuki Tsuruma

Kazuaki Ebata

Yoshikazu Nagasaki

Yukio Shimane

Kenji Goto

Atsushi Yao

Motohiro Takeshima

Akira Kaijou

Masashi Ohyama

Kenichi Sasaki

Masashi Oyama

Yoichiro Sumito

Mami Itose

A crystalline oxide thin film contains an In element, a Ga element and an Ln element, in which the In element is a main component, the Ln element is at least one element selected from the group consisting of La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and an average crystal grain size Dis in a range from 0.05 μm to 0.5 μm.

Crystalline oxide thin film, multilayer body and thin film transistor

A garnet compound represented by a general formula (I):LnInGaAlO  (I)(in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0≤X<3).

Garnet compound, sintered body and sputtering target containing same

A compound includes indium element (In), gallium element (Ga), aluminum element (Al) and oxygen element (O), the compound having a triclinic crystal system with lattice constants being a=10.07&#xb1;0.15 &#x212b;, b=10.45&#xb1;0.15 &#x212b;, c=11.01&#xb1;0.15 &#x212b;, &#x3b1;=111.70&#xb1;0.50&#xb0;, &#x3b2;=107.70&#xb1;0.50&#xb0; and &#x3b3;=90.00&#xb1;0.50&#xb0;.

Compound

An oxide semiconductor film contains In, Ga, and Sn at respective atomic ratios satisfying formulae (1) to (3): 0.01&#x2264;Ga/(In+Ga+Sn)&#x2264;0.30 . . . (1); 0.01&#x2264;Sn/(In+Ga+Sn)&#x2264;0.40 . . . (2); and 0.55&#x2264;In/(In+Ga+Sn)&#x2264;0.98 . . . (3), and Al at an atomic ratio satisfying a formula (4): 0.05&#x2264;Al/(In+Ga+Sn+Al)&#x2264;0.30 . . . (4).

Oxide semiconductor film, thin film transistor, oxide sintered body, and sputtering target

A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below,0.80&#x2264;In/(In+Y+Ga)&#x2264;0.96&#x2003;&#x2003;(1),0.02&#x2264;Y/(In+Y+Ga)&#x2264;0.10&#x2003;&#x2003;(2), and0.02&#x2264;Ga/(In+Y+Ga)&#x2264;0.10&#x2003;&#x2003;(3), and

Garnet compound, oxide sintered compact, oxide semiconductor thin film, thin film transistor, electronic device and image sensor

A garnet compound represented by a general formula (I): LnInGaAlO(I) (in the formula, Ln represents one or more metal elements selected from La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and X satisfies an expression 0&#x2264;X&#x3c;3).

A sintered oxide includes an InOcrystal, and a crystal A whose diffraction peak is in an incidence angle (2&#x3b8;) range defined by (A) to (F) below as measured by X-ray (Cu-K &#x3b1; ray) diffraction measurement: 31.0 to 34.0 degrees . . . (A); 36.0 to 39.0 degrees . . . (B); 50.0 to 54.0 degrees . . . (C); 53.0 to 57.0 degrees . . . (D); 9.0 to 11.0 degrees . . . (E); and 19.0 to 21.0 degrees . . . (F).

Amorphous oxide semiconductor film, oxide sintered body, thin film transistor, sputtering target, electronic device, and amorphous oxide semiconductor film production method

An oxide sintered body includes a bixbyite phase represented by InO, and a garnet phase represented by YInGaO.

Oxide sintered body and sputtering target

An oxide semiconductor film contains In, Ga, and Sn at respective atomic ratios of 0.01&#x2264;Ga/(In+Ga+Sn)&#x2264;0.30 . . . (1), 0.01&#x2264;Sn/(In+Ga+Sn)&#x2264;0.40 . . . (2), and 0.55&#x2264;In/(In+Ga+Sn)&#x2264;0.98 . . . (3), and a rare-earth element X at an atomic ratio of 0.03&#x2264;X/(In+Ga+Sn+X)&#x2264;0.25 . . . (4).

Oxide semiconductor film, electronic device comprising thin film transistor, oxide sintered body and sputtering target

An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.

Oxide sintered body, sputtering target and oxide semiconductor film

The problem is solved by an information processing system including: a standard data acquirer that acquires registered standard data on work; a work data acquirer that acquires work data on a worker performing the work; a determiner that determines whether or not a difference between the standard data acquired by the standard data acquirer and the work data acquired by the work data acquirer is a threshold value or more; a generator that generates an instruction image regarding correction of the work according to the difference when the difference is determined to be the threshold value or more by the determiner; and a displayer that displays the instruction image generated by the generator on a display unit of a display device worn by the worker to display the instruction image superimposed on a real space.

Information processing system, information processor, information processing method and program

A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.

Semiconductor film comprising an oxide containing in atoms, Sn atoms and Zn atoms

A crystalline oxide semiconductor thin film that is composed mainly of indium oxide and comprises surface crystal grains having a single crystal orientation.

Crystalline oxide semiconductor thin film, method for producing crystalline oxide semiconductor thin film, and thin film transistor

A display system which has: a display device configured to be able to display an image superimposed on a reality space; and a managing device configured to manage the image the display device displays, wherein the display device has a display processor configured to read at least one of a qualified image and a disqualified image for an inspection target existing in the reality space from a memory and to display the read image superimposed on the reality space seen through an optical see-through displayer, on the displayer.

Growing community of inventors

Sodegaura, Japan

Kazuyoshi Inoue