The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Aug. 08, 2014
Applicant:
Idemitsu Kosan Co., Ltd., Tokyo, JP;
Inventors:
Shigekazu Tomai, Sodegaura, JP;
Masatoshi Shibata, Sodegaura, JP;
Emi Kawashima, Sodegaura, JP;
Koki Yano, Sodegaura, JP;
Hiromi Hayasaka, Sodegaura, JP;
Assignee:
IDEMITSU KOSAN CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/872 (2006.01); H01L 29/47 (2006.01); H01L 29/26 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 29/24 (2013.01); H01L 29/247 (2013.01); H01L 29/26 (2013.01); H01L 29/47 (2013.01);
Abstract
A Schottky barrier diode element includes an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, the oxide semiconductor layer including either or both of a polycrystalline oxide that includes gallium (Ga) as the main component and an amorphous oxide that includes gallium (Ga) as the main component.