Idemitsu Kosan Company, Limited

Emi Kawashima

Shigekazu Tomai

Masatoshi Shibata

Yuki Tsuruma

Takashi Sekiya

Yoshihiro Ueoka

Kazuyoshi Inoue

Koki Yano

Hiromi Hayasaka

Motohiro Takeshima

Yoshikazu Nagasaki

Atsushi Yao

Kenichi Sasaki

Masashi Oyama

A crystalline oxide thin film contains an In element, a Ga element and an Ln element, in which the In element is a main component, the Ln element is at least one element selected from the group consisting of La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and an average crystal grain size Dis in a range from 0.05 μm to 0.5 μm.

Crystalline oxide thin film, multilayer body and thin film transistor

A schottky barrier diode element having a silicon (Si) substrate, an oxide semiconductor layer and a schottky electrode layer, wherein the oxide semiconductor layer includes a polycrystalline and/or amorphous oxide semiconductor having a band gap of 3.0 eV or more and 5.6 eV or less.

Oxide semiconductor substrate and schottky barrier diode

A compound includes indium element (In), gallium element (Ga), aluminum element (Al) and oxygen element (O), the compound having a triclinic crystal system with lattice constants being a=10.07&#xb1;0.15 &#x212b;, b=10.45&#xb1;0.15 &#x212b;, c=11.01&#xb1;0.15 &#x212b;, &#x3b1;=111.70&#xb1;0.50&#xb0;, &#x3b2;=107.70&#xb1;0.50&#xb0; and &#x3b3;=90.00&#xb1;0.50&#xb0;.

Compound

A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below,0.80&#x2264;In/(In+Y+Ga)&#x2264;0.96&#x2003;&#x2003;(1),0.02&#x2264;Y/(In+Y+Ga)&#x2264;0.10&#x2003;&#x2003;(2), and0.02&#x2264;Ga/(In+Y+Ga)&#x2264;0.10&#x2003;&#x2003;(3), and

Garnet compound, oxide sintered compact, oxide semiconductor thin film, thin film transistor, electronic device and image sensor

A laminated body comprising a substrate, one or more layers selected from a contact resistance reducing layer and a reduction suppressing layer, a Schottky electrode layer and a metal oxide semiconductor layer in this order.

Laminated body

A structure including a metal oxide semiconductor layer and a noble metal oxide layer, wherein the metal oxide semiconductor layer and the noble metal oxide layer are adjacent to each other, and a film thickness of the noble metal oxide layer is more than 10 nm.

Structure, method for manufacturing same, semiconductor element, and electronic circuit

A semiconductor devicewhich comprises a pair of an ohmic electrodeand a Schottky electrodeseparated from each other, and a semiconductor layerin contact with the ohmic electrodeand the Schottky electrode, and which satisfies the following formula (I): in which n is a carrier concentration (cm) of the semiconductor layer, &#x3b5; is a dielectric constant (F/cm) of the semiconductor layer, Vis a forward effective voltage (V) between the ohmic electrode and the Schottky electrode, q is an elementary charge (C), and L is a distance (cm) between the ohmic electrode and the Schottky electrode.

Semiconductor device and electric apparatus using same

A laminated body comprising a substrate, an ohmic electrode layer, a metal oxide semiconductor layer, a Schottky electrode layer and a buffer electrode layer in this order, wherein a reduction suppressing layer is provided between the Schottky electrode layer and the buffer electrode layer.

Laminated article

A Schottky barrier diode element includes an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, the oxide semiconductor layer including either or both of a polycrystalline oxide that includes gallium (Ga) as the main component and an amorphous oxide that includes gallium (Ga) as the main component.

Growing community of inventors

Sodegaura, Japan

Emi Kawashima